Synthesized of GaN Nanostructure Using 1064 nm Laser Wavelength by Pulsed Laser Ablation in Liquid

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چکیده

GaN nanostructure was Synthesized using Pulsed laser ablation in liquid ethanol with Nd:YAG at pulsed energy of 1600 mj and wavelength 1064 nm. The nanoparticle deposited the drop cast method on prepared porous silicon substrate. structural optical properties were studied. XRD pattern shows a high sharp peak pSi 2θ =28.74 reflected from (111) plane exhibits h-GaN rise =34.54, =37.49, 2θ= 48.19 2θ=57.99 which are (002), (100), (102), (110) planes respectively where (002) has highest than others. AFM FESM proved an increase grain size GaN. reflectance (81.79%) (306nm) band gap (3.9eV).

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ژورنال

عنوان ژورنال: Ma?allat? al-handasat? wa-al-tikn?l??iy?

سال: 2022

ISSN: ['1681-6900', '2412-0758']

DOI: https://doi.org/10.30684/etj.v40i2.2271